IRFHM830TRPBF

Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, QFN-8

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Infineon IRFHM830TRPBF technical specifications.

Max Operating Temperature

150

Number of Terminals

Min Operating Temperature

-55

Terminal Position

DUAL

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.