Infineon
IRFHM8337TRPBF
Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8
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Technical Specifications
Infineon IRFHM8337TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFHM8337TRPBF Datasheet
Download the complete datasheet for Infineon IRFHM8337TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.