P-channel MOSFET featuring 30V drain-source voltage and 11A continuous drain current. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0146 ohms. Designed with a single element and 5 terminals, it operates up to a maximum temperature of 150°C. The component is housed in a 3x3mm plastic QFN-8 package, ensuring halogen-free and RoHS compliance.
Infineon IRFHM9331TRPBF technical specifications.
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