IRFHS9301TRPBF

P-channel MOSFET featuring 6A continuous drain current (I(D)) and 30V drain-source voltage (V(DS)). This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.037 ohms. It is a single-element device with 6 terminals in a dual position configuration. The component is housed in a 2x2mm plastic QFN package, meeting halogen-free and RoHS compliant standards.