P-channel MOSFET featuring 6A continuous drain current (I(D)) and 30V drain-source voltage (V(DS)). This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.037 ohms. It is a single-element device with 6 terminals in a dual position configuration. The component is housed in a 2x2mm plastic QFN package, meeting halogen-free and RoHS compliant standards.
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Infineon IRFHS9301TRPBF technical specifications.
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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