N-channel silicon power MOSFET featuring 150V drain-source voltage and 8.7A continuous drain current. This through-hole component, housed in a TO-220FP package, offers a 5-pin configuration with a tab. Key specifications include a maximum drain-source resistance of 95mΩ at 10V and a typical gate charge of 13nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 18000mW.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Infineon IRFI4019HG-117P technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 5 |
| PCB | 5 |
| Tab | Tab |
| Package Length (mm) | 10.63(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 14.22(Max) |
| Seated Plane Height (mm) | 16.53(Max) |
| Pin Pitch (mm) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8.7A |
| Material | Si |
| Maximum Drain Source Resistance | 95@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 810@25VpF |
| Maximum Power Dissipation | 18000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRFI4019HG-117P Datasheet
Download the complete datasheet for Infineon IRFI4019HG-117P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.