This device is a dual N-channel MOSFET half-bridge designed for Class D audio amplifier applications. It integrates two power MOSFET switches in a half-bridge configuration and is supplied in a lead-free TO-220 Full-Pak 5-pin package. The datasheet specifies 100 V drain-to-source voltage, 11 A continuous drain current at 25°C case temperature, and static on-resistance as low as 58 mΩ typical and 72.5 mΩ maximum at 10 V gate drive. It is optimized for low gate charge, low switch charge, and low reverse recovery to improve efficiency, reduce distortion, and lower EMI. The maximum junction temperature is 150°C.
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| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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