N-channel Power MOSFET with 100V drain-source voltage and 35A continuous drain current. Features HEXFET process technology, 13.5mΩ maximum drain-source resistance at 10V, and 42W maximum power dissipation. Housed in a 3-pin TO-220FP package with through-hole mounting and a typical gate charge of 54nC. Operates across a temperature range of -55°C to 175°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Infineon IRFI4510GPBF technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.75(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 16.13(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 35A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.5@10VmOhm |
| Typical Gate Charge @ Vgs | 54@10VnC |
| Typical Gate Charge @ 10V | 54nC |
| Typical Input Capacitance @ Vds | 2998@50VpF |
| Maximum Power Dissipation | 42000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRFI4510GPBF Datasheet
Download the complete datasheet for Infineon IRFI4510GPBF to view detailed technical specifications.
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