
N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 20A. This single-element silicon FET offers a low on-resistance of 0.052 ohms. Designed for high-temperature operation up to 175°C, it operates from -55°C to 175°C. The component utilizes a 3-terminal TO-220AB package.
Infineon IRFI540NPBF technical specifications.
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