
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor designed for small signal applications. Features a 5.1A drain current (I(D)) and a 55V breakdown voltage. This single-element JFET utilizes a TO-261AA package with a lead-free finish. The component has 4 terminals with a dual terminal position.
Infineon IRFL024ZTRPBF technical specifications.
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