Infineon
IRFN350
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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Technical Specifications
Infineon IRFN350 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | True |
Datasheet
Infineon IRFN350 Datasheet
Download the complete datasheet for Infineon IRFN350 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.