This N-channel power MOSFET is rated for 55 V drain-to-source voltage, 110 A continuous drain current at 25°C, and 8 mΩ maximum on-resistance. It is a HEXFET device that uses advanced process technology for low on-resistance, fast switching, dynamic dv/dt capability, and fully avalanche-rated operation. The device supports junction operation up to 175°C and is supplied in a TO-247AC package with an isolated mounting hole. It is specified as a lead-free device for high-power commercial and industrial applications.
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| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AC |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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