N-Channel Power MOSFET featuring a continuous drain current of 42A and a drain-source voltage of 100V. This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.036 ohms. Designed with a single element and three terminals, it operates up to a maximum junction temperature of 175°C. The component is housed in a TO-247AC package and is lead-free.
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Technical Specifications
Infineon IRFP150NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AC
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFP150NPBF Datasheet
Download the complete datasheet for Infineon IRFP150NPBF to view detailed technical specifications.
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