This N-channel power MOSFET is rated for 60 V drain-to-source voltage and is intended for high-efficiency synchronous rectification, high-speed power switching, and hard-switched high-frequency circuits. It provides 2.1 mΩ typical and 2.5 mΩ maximum on-resistance at VGS = 10 V, with continuous drain current ratings up to 270 A silicon-limited and 195 A package-limited at 25°C. The device is specified for operation from -55°C to +175°C junction temperature and supports up to 375 W maximum power dissipation at 25°C case temperature. It is supplied in a TO-247 package and the listed standard pack form is tube with 25 pieces.
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Infineon IRFP3006PBF technical specifications.
| Max Operating Temperature | 175 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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