IRFP3306PBF

This N-channel HEXFET power MOSFET is rated for 60 V drain-to-source voltage and up to 120 A package-limited continuous drain current in a TO-247AC package. It specifies 3.3 mΩ typical and 4.2 mΩ maximum drain-to-source on-resistance at VGS = 10 V, with 85 nC typical total gate charge and 4520 pF typical input capacitance. The device supports a junction and storage temperature range from -55°C to 175°C, a maximum gate-to-source voltage of ±20 V, and lead-free construction. Typical reverse recovery time is 31 ns at 25°C, and the single-pulse avalanche energy rating is 184 mJ.