N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 75V and a continuous drain current capability of 350A. It boasts a low drain-source on-resistance of 1.85 mOhm at 10V gate-source voltage. The device operates across a wide temperature range from -55°C to 175°C and is housed in a 3-pin TO-247AC package.
PackageTO-247AC
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Technical Specifications
Infineon IRFP4368PbF technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 75V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 350A |
| Material | Si |
| Maximum Drain Source Resistance | 1.85@10VmOhm |
| Typical Gate Charge @ Vgs | 380@10VnC |
| Typical Gate Charge @ 10V | 380nC |
| Typical Input Capacitance @ Vds | 19230@50VpF |
| Maximum Power Dissipation | 520000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Pin Count | 3 |
| Package/Case | TO-247AC |
| Package Family Name | TO-247 |
Compliance
| RoHS | Yes with Exemption |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRFP4368PbF Datasheet
Download the complete datasheet for Infineon IRFP4368PbF to view detailed technical specifications.
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