N-Channel Power MOSFET featuring a continuous drain current of 195A and a maximum drain-source voltage of 75V. This silicon Metal-Oxide Semiconductor FET offers a low on-resistance of 0.00185 ohms. Designed with a single element and three terminals, it operates up to a maximum temperature of 175°C. The component utilizes a TO-247AC package and is lead-free.
Quick Jump:
Technical Specifications
Infineon IRFP4368PBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AC |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRFP4368PBF Datasheet
Download the complete datasheet for Infineon IRFP4368PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.