N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 75V and a continuous drain current capability of 350A. It boasts a low drain-source on-resistance of 1.85 mOhm at 10V gate-source voltage. The device operates across a wide temperature range from -55°C to 175°C and is housed in a 3-pin TO-247AC package.
PackageTO-247AC
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Technical Specifications
Infineon IRFP4368PbF technical specifications.
General
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
75V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
350A
Material
Si
Maximum Drain Source Resistance
1.85@10VmOhm
Typical Gate Charge @ Vgs
380@10VnC
Typical Gate Charge @ 10V
380nC
Typical Input Capacitance @ Vds
19230@50VpF
Maximum Power Dissipation
520000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Pin Count
3
Package/Case
TO-247AC
Package Family Name
TO-247
Compliance
RoHS
Yes with Exemption
RoHS Version
2011/65/EU, 2015/863
Datasheet
Infineon IRFP4368PbF Datasheet
Download the complete datasheet for Infineon IRFP4368PbF to view detailed technical specifications.
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