This device is an N-channel power MOSFET rated for 150 V drain-to-source voltage and 171 A continuous drain current at 25°C case temperature. It features very low drain-to-source on-resistance with 4.8 mΩ typical and 5.9 mΩ maximum at 10 V gate drive, and it is housed in a TO-247AC through-hole package. The transistor is specified for operation up to 175°C junction temperature and supports a total power dissipation of 517 W at 25°C case temperature. It is designed for high-efficiency synchronous rectification, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits. The datasheet also identifies improved gate, avalanche, and dynamic dV/dt ruggedness together with enhanced body-diode dV/dt and dI/dt capability.
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| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AC |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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