This N-channel power MOSFET is rated for 200 V drain-to-source voltage and 130 A continuous drain current at 25°C case temperature. It provides 8.0 mΩ typical and 9.7 mΩ maximum on-resistance at 10 V gate drive in a TO-247AC through-hole package. The device supports fast switching with 161 nC typical total gate charge, 10.72 nF typical input capacitance, and a fully characterized avalanche SOA. It includes an integral body diode with 1.3 V maximum forward voltage and is specified for operation from -55°C to 175°C junction temperature. The datasheet identifies it as a lead-free device designed and qualified for the industrial market.
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Infineon IRFP4668PBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AC |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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