N-Channel Power MOSFET featuring 250V drain-source voltage and 93A continuous drain current. This single-element silicon device offers a low on-resistance of 0.0175 ohms. Encased in a TO-247AC package, it is designed with three terminals for efficient power management.
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Technical Specifications
Infineon IRFP4768PBF technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AC
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFP4768PBF Datasheet
Download the complete datasheet for Infineon IRFP4768PBF to view detailed technical specifications.
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