N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 404A continuous drain current. This single-element HEXFET technology component is housed in a TO-247AC package with 3 through-hole pins and a tab, offering a low 1.3mOhm drain-source resistance at 10V. Maximum power dissipation reaches 366W, with operating temperatures ranging from -55°C to 175°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Infineon IRFP7430PBF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AC
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Seated Plane Height (mm)
24.99(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AC
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
404A
Material
Si
Maximum Gate Threshold Voltage
3.9V
Maximum Drain Source Resistance
1.3@10VmOhm
Typical Gate Charge @ Vgs
300@10VnC
Typical Gate Charge @ 10V
300nC
Typical Input Capacitance @ Vds
14240@25VpF
Maximum Power Dissipation
366000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFP7430PBF Datasheet
Download the complete datasheet for Infineon IRFP7430PBF to view detailed technical specifications.
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