IRFP7530PBF

This N-channel power MOSFET is rated for 60 V drain-source voltage, 195 A continuous drain current at 25°C, and 341 W maximum power dissipation. It uses StrongIRFET™ technology and provides a maximum 2 mΩ RDS(on) at 10 V with typical total gate charge of 274 nC and gate-drain charge of 83 nC. The device is offered in a TO-247 through-hole package and operates from -55°C to 175°C with 0.44 K/W maximum thermal resistance from junction to case. It is intended for low-frequency power designs such as DC motors, battery management systems, inverters, and DC-DC converters.