N-Channel Power MOSFET featuring a 55V drain-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.075 ohms. Designed with a single element and TO-252AA package, it operates up to a maximum temperature of 175°C.
Sign in to ask questions about the Infineon IRFR024NTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IRFR024NTRPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRFR024NTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
