N-Channel Power MOSFET featuring 100V drain-source voltage and 9.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.21 ohms. Designed for high-temperature operation with a maximum operating temperature of 175°C and a minimum of -55°C. Packaged in a TO-252AA (DPAK) plastic package with single terminal position.
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Technical Specifications
Infineon IRFR120NTRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR120NTRPBF Datasheet
Download the complete datasheet for Infineon IRFR120NTRPBF to view detailed technical specifications.
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