This N-channel power MOSFET is rated for 40 V drain-to-source voltage and 42 A continuous drain current at 25°C case temperature with a 10 V gate drive. It provides a maximum drain-to-source on-resistance of 5.5 mΩ and supports fast switching with 59 nC typical total gate charge and 2950 pF typical input capacitance. The device operates with junction temperatures up to 175°C and is specified for repetitive avalanche operation up to Tjmax. It is supplied in the lead-free D-Pak / TO-252AA package and includes an integral body diode with 1.3 V maximum forward drop.
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Infineon IRFR4104TRPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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