P-channel MOSFET, 100V drain-source voltage, 6.6A continuous drain current, and 0.48 ohm on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-252AA (DPAK-3) lead-free plastic housing with two terminals.
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Technical Specifications
Infineon IRFR9120NTRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR9120NTRPBF Datasheet
Download the complete datasheet for Infineon IRFR9120NTRPBF to view detailed technical specifications.
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