N-channel silicon power MOSFET featuring 200V drain-source voltage and 24A continuous drain current. This single-element, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.0775 ohms. Designed for high-temperature operation up to 175°C, it is housed in a TO-263AB (D2PAK-3) package.
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Technical Specifications
Infineon IRFS4620TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFS4620TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS4620TRLPBF to view detailed technical specifications.
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