N-channel silicon power MOSFET featuring 200V drain-source voltage and 24A continuous drain current. This single-element, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.0775 ohms. Designed for high-temperature operation up to 175°C, it is housed in a TO-263AB (D2PAK-3) package.
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Technical Specifications
Infineon IRFS4620TRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFS4620TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS4620TRLPBF to view detailed technical specifications.
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