N-channel Power MOSFET featuring 100V drain-source voltage and 61A continuous drain current. This single-element HEXFET silicon transistor operates in enhancement mode with a maximum gate threshold voltage of 4V. Packaged in a TO-262 (I2PAK) through-hole configuration with 3 pins and a tab, it offers a low drain-source on-resistance of 13.9 mOhm at 10V. Maximum power dissipation reaches 140W, with an operating temperature range of -55°C to 175°C.
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Infineon IRFSL4510PBF technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.65(Max) |
| Seated Plane Height (mm) | 15.01(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 61A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.9@10VmOhm |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Typical Gate Charge @ 10V | 58nC |
| Typical Input Capacitance @ Vds | 3180@50VpF |
| Maximum Power Dissipation | 140000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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