N-channel power MOSFET supports a 30 V maximum drain-source voltage and 8.2 A maximum drain current at 25 °C. The device has a maximum on-resistance of 19 mΩ at 10 V gate drive and 29 mΩ at 4.5 V gate drive. It uses a surface-mount TSOP-6 package with 2 W maximum power dissipation and 62.5 K/W maximum junction-to-ambient thermal resistance. Operating and junction temperature ratings extend from -55 °C to 150 °C, and the product is RoHS compliant.
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| MOSFET polarity | N-channel |
| Drain-source voltage max | 30V |
| Continuous drain current max at 25°C | 8.2A |
| Drain-source on-resistance max at 10 V | 19mΩ |
| Drain-source on-resistance max at 4.5 V | 29mΩ |
| Total gate charge typ at 4.5 V | 4.8nC |
| Gate-drain charge | 1.6nC |
| Power dissipation max at 25°C | 2W |
| Junction-to-ambient thermal resistance max | 62.5K/W |
| Operating temperature range | -55 to 150°C |
| Junction temperature max | 150°C |
| Mounting | SMD |
| Package | TSOP-6 |
| Moisture sensitivity level | 1 |
| Technology | IR MOSFET™ |
| Special features | Small Power |
| RoHS | Compliant |
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