N-channel Power MOSFET featuring HEXFET process technology. This single-element silicon transistor operates in enhancement mode with a maximum drain-source voltage of 100V and a continuous drain current of 63A. Housed in an IPAK (TO-251AA) plastic package with through-hole mounting, it offers a low drain-source on-resistance of 13.9 mOhm at 10V. Key specifications include a typical gate charge of 54nC and input capacitance of 3031pF, with an operating temperature range of -55°C to 175°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Infineon IRFU4510PBF technical specifications.
General
| Package/Case | IPAK |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 63A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.9@10VmOhm |
| Typical Gate Charge @ Vgs | 54@10VnC |
| Typical Gate Charge @ 10V | 54nC |
| Typical Input Capacitance @ Vds | 3031@50VpF |
| Maximum Power Dissipation | 143000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRFU4510PBF Datasheet
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