N-channel Power MOSFET featuring HEXFET process technology. This single-element silicon transistor operates in enhancement mode with a maximum drain-source voltage of 100V and a continuous drain current of 63A. Housed in an IPAK (TO-251AA) plastic package with through-hole mounting, it offers a low drain-source on-resistance of 13.9 mOhm at 10V. Key specifications include a typical gate charge of 54nC and input capacitance of 3031pF, with an operating temperature range of -55°C to 175°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Infineon IRFU4510PBF technical specifications.
General
Package/Case
IPAK
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
2.39(Max)
Package Height (mm)
6.22(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
63A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
13.9@10VmOhm
Typical Gate Charge @ Vgs
54@10VnC
Typical Gate Charge @ 10V
54nC
Typical Input Capacitance @ Vds
3031@50VpF
Maximum Power Dissipation
143000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFU4510PBF Datasheet
Download the complete datasheet for Infineon IRFU4510PBF to view detailed technical specifications.
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