P-channel HEXFET power MOSFET rated for -55 V drain-to-source voltage and -31 A continuous drain current at 25°C case temperature. It features a maximum drain-to-source on-resistance of 0.065 Ω at VGS = -10 V and supports a gate-to-source voltage range of ±20 V. The device is supplied in the straight-lead I-PAK / TO-251AA package for through-hole mounting and operates over a -55°C to +175°C junction temperature range. It is fully avalanche rated and specified for up to 110 W power dissipation at 25°C case temperature.
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Infineon IRFU5305PBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-251AA |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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