N-Channel Power MOSFET, 55V drain-source voltage, 49A continuous drain current, and 0.0175 ohm on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Designed for high-efficiency power switching applications with a maximum operating temperature of 175°C. Packaged in a D2PAK-2/3 plastic housing with lead-free termination.
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| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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