N-Channel Power MOSFET, 55V drain-source voltage, 49A continuous drain current, and 0.0175 ohm on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Designed for high-efficiency power switching applications with a maximum operating temperature of 175°C. Packaged in a D2PAK-2/3 plastic housing with lead-free termination.
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Technical Specifications
Infineon IRFZ44NSTRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFZ44NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRFZ44NSTRLPBF to view detailed technical specifications.
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