Infineon
IRG4BC30FD-S
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
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Technical Specifications
Infineon IRG4BC30FD-S technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
No
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRG4BC30FD-S Datasheet
Download the complete datasheet for Infineon IRG4BC30FD-S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.