N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter voltage and 76A continuous collector current. Operates with a maximum power dissipation of 268W and a typical collector-emitter saturation voltage of 1.6V. Packaged in a TO-247AD through-hole configuration with 3 pins and a tab, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C.
PackageTO-247AD
MountingThrough Hole
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Technical Specifications
Infineon IRGP4069-EPbF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AD
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AD
Technology
Trench
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
76A
Maximum Power Dissipation
268000mW
Typical Collector Emitter Saturation Voltage
1.6V
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRGP4069-EPbF Datasheet
Download the complete datasheet for Infineon IRGP4069-EPbF to view detailed technical specifications.
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