N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter voltage and 76A continuous collector current. Operates with a maximum power dissipation of 268W and a typical collector-emitter saturation voltage of 1.6V. Packaged in a TO-247AD through-hole configuration with 3 pins and a tab, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247AD |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.7(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AD |
| Technology | Trench |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 76A |
| Maximum Power Dissipation | 268000mW |
| Typical Collector Emitter Saturation Voltage | 1.6V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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