N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter voltage and 76A continuous collector current. Operates with a maximum power dissipation of 268,000mW and a typical collector-emitter saturation voltage of 1.6V. Packaged in a TO-247AC through-hole configuration with 3 pins and a tab, offering a wide operating temperature range from -55°C to 175°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Infineon IRGP4069PbF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AC
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Seated Plane Height (mm)
24.99(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AC
Technology
Trench
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
76A
Maximum Power Dissipation
268000mW
Typical Collector Emitter Saturation Voltage
1.6V
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRGP4069PbF Datasheet
Download the complete datasheet for Infineon IRGP4069PbF to view detailed technical specifications.
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