Infineon
IRHG9110
Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN
Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN
Quick Jump:
Technical Specifications
Infineon IRHG9110 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 14 |
| Terminal Position | DUAL |
| JEDEC Package Code | MO-036AB |
| Number of Elements | 4 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRHG9110 Datasheet
Download the complete datasheet for Infineon IRHG9110 to view detailed technical specifications.
No datasheet is available for this part.