Infineon
IRHNJ67134
Power Field-Effect Transistor, 19A I(D), 150V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
Power Field-Effect Transistor, 19A I(D), 150V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Infineon IRHNJ67134 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Infineon IRHNJ67134 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRHNJ67134 Datasheet
Download the complete datasheet for Infineon IRHNJ67134 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.