Infineon
IRHNJ67230
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
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Technical Specifications
Infineon IRHNJ67230 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRHNJ67230 Datasheet
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