N-channel power MOSFET featuring a continuous drain current of 55A and a drain-source voltage of 100V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.03 ohms. Designed with a single element and two terminals, it is housed in a lead-free plastic D2PAK-3 package.
Quick Jump:
Technical Specifications
Infineon IRL2910STRLPBF technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRL2910STRLPBF Datasheet
Download the complete datasheet for Infineon IRL2910STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.