This device is a 30 V N-channel power MOSFET in a TO-220AB package. It is specified for very low drain-to-source on-resistance, with a maximum of 3.5 mΩ at 10 V gate drive and 4.5 mΩ at 4.5 V gate drive. The transistor is characterized for 140 A continuous drain current at 25 °C case temperature, 620 A pulsed drain current, and operation from -55 °C to 175 °C junction temperature. Gate charge is typically 36 nC, and the body diode reverse recovery time is typically 29 ns. The part is lead-free and is designed and qualified for the industrial market.
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Infineon IRLB4132PBF technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage | 30V |
| Continuous Drain Current @ 25°C | 140A |
| Continuous Drain Current @ 100°C | 100A |
| Pulsed Drain Current | 620A |
| Gate-to-Source Voltage | ±20V |
| Power Dissipation @ 25°C | 150W |
| Package Limited Drain Current | 78A |
| RDS(on) Max @ VGS=10V | 3.5mΩ |
| RDS(on) Max @ VGS=4.5V | 4.5mΩ |
| Gate Threshold Voltage | 1.35 to 2.35V |
| Forward Transconductance | 190S |
| Total Gate Charge | 36 typical, 54 maxnC |
| Input Capacitance | 5110pF |
| Output Capacitance | 960pF |
| Reverse Transfer Capacitance | 440pF |
| Junction-to-Case Thermal Resistance | 1.11 max°C/W |
| Junction-to-Ambient Thermal Resistance | 62 max°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Reverse Recovery Time | 29 typical, 44 maxns |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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