IRLHS6342TRPBF

N-Channel Power MOSFET, 30V drain-source voltage, 8.7A continuous drain current, and 0.0195 ohm on-resistance. This single-element silicon Metal-Oxide Semiconductor FET features a 6-terminal QFN package measuring 2 x 2 mm. It operates up to a maximum temperature of 150°C and is halogen-free and RoHS compliant.