Infineon
IRLL2705
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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Technical Specifications
Infineon IRLL2705 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-261AA |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLL2705 Datasheet
Download the complete datasheet for Infineon IRLL2705 to view detailed technical specifications.
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