N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 6.3A continuous drain current. This single-element HEXFET process technology component offers a low 21mOhm drain-source resistance at 4.5V gate-source voltage. Key specifications include a typical gate charge of 8.9nC and input capacitance of 700pF at 16V drain-source voltage. Designed for surface-mount applications, it is housed in a 3-pin SOT-23 package with a maximum power dissipation of 1300mW and operates across a temperature range of -55°C to 150°C.
PackageSOT-23
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Technical Specifications
Infineon IRLML6244TRPbF technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 6.3A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 8.9@10VnC |
| Typical Gate Charge @ 10V | 8.9nC |
| Typical Input Capacitance @ Vds | 700@16VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Pin Count | 3 |
| Package/Case | SOT-23 |
| Package Family Name | SOT-23 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRLML6244TRPbF Datasheet
Download the complete datasheet for Infineon IRLML6244TRPbF to view detailed technical specifications.
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