N-Channel Power MOSFET, featuring a continuous drain current of 5A and a drain-source voltage of 30V. This silicon Metal-Oxide-Semiconductor FET offers a low on-resistance of 0.029 ohms. Designed with a single element and three terminals in a DUAL configuration, it utilizes the TO-236AB package. The component operates up to a maximum temperature of 150°C and is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Infineon IRLML6344TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLML6344TRPBF Datasheet
Download the complete datasheet for Infineon IRLML6344TRPBF to view detailed technical specifications.
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