N-Channel Power MOSFET featuring a continuous drain current of 17A and a drain-source voltage of 55V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.08 ohms. Designed with a single element and two terminals, it is housed in a TO-252AA package. Maximum operating temperature reaches 175°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IRLR024NTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRLR024NTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
