N-Channel Power MOSFET featuring a continuous drain current of 17A and a drain-source voltage of 55V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.08 ohms. Designed with a single element and two terminals, it is housed in a TO-252AA package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Infineon IRLR024NTRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLR024NTRPBF Datasheet
Download the complete datasheet for Infineon IRLR024NTRPBF to view detailed technical specifications.
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