Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Infineon IRLR120N technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
