N-Channel Power MOSFET, 100V drain-source voltage, 10A continuous drain current, and 0.225 ohm on-resistance. Features a single-element silicon metal-oxide semiconductor field-effect transistor construction. Packaged in a TO-252AA (DPAK-3) lead-free plastic surface-mount package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Infineon IRLR120NTRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLR120NTRPBF Datasheet
Download the complete datasheet for Infineon IRLR120NTRPBF to view detailed technical specifications.
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