High-performance half-bridge MOSFET driver IC designed for efficient power switching applications. Features include integrated dead-time generation and high-side/low-side gate drive capability. Operates with a wide supply voltage range and offers robust protection features. Ideal for driving power MOSFETs in various inverter and motor control circuits.
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Infineon IRS2008STRPBF technical specifications.
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
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