This device is a dual low-side gate driver for power MOSFET and IGBT applications. It operates from a 6 V to 20 V gate-drive supply and provides two independent outputs with typical source and sink peak currents of 2.3 A and 3.3 A. CMOS Schmitt-triggered inputs support 3.3 V and 5 V logic compatibility, and the two channels have matched propagation delays. Typical turn-on and turn-off propagation delays are 50 ns, with typical rise and fall times of 25 ns. The part is specified for ambient operation from -40 °C to 125 °C and is supplied in an SOIC-8N tape-and-reel package.
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| Max Operating Temperature | 125 |
| Number of Terminals | 8 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G8 |
| Width | 3.9 |
| Length | 4.9 |
| Number of Functions | 2 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 15 |
| Supply Voltage-Min | 6 |
| Supply Voltage-Max | 20 |
| Interface IC Type | HALF BRIDGE BASED PERIPHERAL DRIVER |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
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