Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Infineon JANTX2N6851 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-205AF |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | True |
No datasheet is available for this part.
