Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14
Infineon JANTX2N7334 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 14 |
| Terminal Position | DUAL |
| JEDEC Package Code | MO-036AB |
| Number of Elements | 4 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | True |
No datasheet is available for this part.
