PNP silicon switching transistor in a SOT-23 surface-mount package for general-purpose small-signal switching applications. It supports 40 V collector-emitter and collector-base breakdown voltage, 5 V emitter-base breakdown voltage, and 200 mA collector current. Total power dissipation is 330 mW with a maximum junction temperature of 150 °C, and transition frequency is specified at 250 MHz. The device also specifies low leakage, low saturation voltage, and DC current gain from 100 to 300 at 10 mA test conditions.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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